国家/地区 美国（11） 韩国（9） 中国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（4） 日本（4） 台湾（2）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B031/02（11） B82Y040/00（10） B82Y030/00（9）
C01B031/04（9） C23C016/26（8） H01B001/04（6）
B05D005/12（3） B32B009/04（2） B82B003/00（2）
C01B031/00（2） C23C016/02（2） C23F001/02（2）
C30B029/02（2） H01L021/336（2） H01L029/786（2）
发明人 HONG B H（3） KIM K S（2）
公开年 2011（14）
申请年 2011（14）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（3）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Producing two-dimensional nanomaterials comprises e.g. providing a mixture comprising e.g. graphene oxide particles and water, adding a sol precursor compound to the mixture, and reacting the mixture in a sol/gel process to form gel.

FENG X, IVANOVICI S, MUELLEN K, YANG S, MULLEN K

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U