国家/地区 韩国（8） 美国（3）
IPC部 H（7） B（5） C（5）
IPC大类 H01（7） B82（4） C01（4）
C23（3） B01（2）
IPC小类 H01L（5） C01B（4） B82Y（3）
C23C（3） H01B（3） B01J（2）
IPC C01B031/02（4） C23C016/26（3） H01B001/04（3）
H01L021/336（3） H01L029/78（3） B01J019/08（2）
B82Y040/00（2） H01L021/268（2）
发明人 CHOI I S（3） LEE K J（3） CHOI I（2）
CHOI S Y（2） HONG B H（2） HWANG J O（2）
KIM S O（2） LEE D H（2） LEE K（2）
公开年 2012（8）
申请年 2011（8）
专利权人 KOREA ADV INST SCI TECHNOLOGY（8）

Preparation of graphene composite for e.g. electrode, involves dispersing graphene oxide into solvent, forming dispersed graphene oxide on transition metal oxide or transition metal hydroxide nanoparticles and reducing in solvent.

KIM J D, LEE J W

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Manufacture of block copolymer using graphene film, involves laminating graphene oxide film on substrate, stacking laminated graphene oxide film and subjecting to self-assembly.

KIM S O, KIM B H, KIM J Y, JEONG S J, HWANG J O, LEE D H, SHIN D O

Assaying phospholipase activity, by preparing graphene oxide/carbon nanotube double layer film deposited on substrate, performing hydrolysis by spotting lipid sample on substrate, and analyzing spectrum of product by spectrometry.

MIN D H, LEE J E, KIM Y K

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for manufacturing graphene transistor, involves laminating insulating layer in semiconductor device, providing drain and gate electrode metal layer that is laminated on source.

LEE K J, CHOI I S, CHOI S Y, HONG B H