国家/地区 美国（46）
IPC部 B（46）
IPC大类 C01（46）
IPC小类 C01B（46）
IPC C01B031/02（35） B82Y040/00（33） B82Y030/00（32）
C01B031/04（32） C23C016/26（31） H01B001/04（10）
B32B009/04（8） C01B032/186（8） B82B003/00（7）
B82Y099/00（6） B32B009/00（5） B32B038/10（5）
C23C016/02（5） B05D005/12（4） B21B001/40（4）
发明人 CHOI J（5） CHIBA G（4） CHIBA Y（4）
HONG B H（3） KIM H（3） YOSHIHIRO C（3）
CHIBA YOSHIHIRO（2） CHOI B（2） CHOI B L（2）
CHOI J Y（2） FAN S（2） HUNLEY D P（2）
JIANG K（2） LEE E（2） LEE E K（2）
公开年 2013（26） 2012（17） 2014（3）
申请年 2012（46）
专利权人 HANWHA TECHW.（6） SAMSUNG TECH.（6） SAMSUNG ELEC.（5） HANWHA AEROS.（4）
JX NIPPON MI.（4） NIPPON MININ.（4） NIPPON MININ.（4） UNIV SUNGKYU.（4）
UNIV SUNGKYU.（3） CHOI J（2） HON HAI PREC.（2） HONG B H（2）
HONGFUJIN PR.（2） NIPPON MININ.（2） UNIV KENTUCK.（2） UNIV SUNGKYU.（2）
UNIV TSINGHU.（2）

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Composite structure, useful for a transparent electrode in display panels of mobile phones and tablet personal computers, comprises nanofiber substrate, graphene layer disposed on a surface of a net structure and organic compound.

MA C M, HUANG Y, YANG S, TIEN H, MA M C, WANG N

Fabricating graphene, comprises depositing graphene seed layer on substrate of base layer, depositing catalyst metal layer on substrate and graphene seed layer and introducing carbon atom to graphene seed layer.

PATIL V

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W