国家/地区 美国（8） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 B（8）
IPC大类 B82（8）
IPC小类 B82Y（8）
IPC B82Y040/00（8）
发明人
公开年 2013（4） 2014（3）
申请年 2013（8）
专利权人 EMPIRE TECHN.（2）

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z

Composition of graphene-based nanomaterials used in e.g. nanostructure and gas sensor, comprises atomic layer of graphene monoxide, where graphene monoxide is crystallographically ordered and configured to form diffraction rings.

CHEN J, GAJDARDZISKAJOSIFOVSKA M, HIRSCHMUGL C, MATTSON E, PU H, WEINERT M

Apparatus used for producing graphene comprises seed crystal fixed to support substrate, feedstock injector, laser to selectively generate laser beam, and beam shaping optics to couple laser beam to a portion of seed crystal and feedstock.

HAUCK J P

Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.

VEERASAMY V S

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A