国家/地区 世界知识产权组织（28）
IPC部 C（28）
IPC大类 C23（28）
IPC小类 C23C（25） C01B（21） H01L（9）
B32B（5） B82Y（5） B05D（4）
C23F（4） H01B（4） C25D（3）
C30B（3） B22F（2） B41M（2）
B82B（2） G06F（2） H01G（2）
IPC C01B031/04（18） C23C016/26（17） C01B032/182（10）
C01B032/186（9） C01B031/02（8） C01B032/194（7）
B82Y040/00（5） C01B032/184（5） C23C016/01（4）
C23C016/455（4） H01L021/02（4） H01L029/16（4）
B32B009/00（3） B32B018/00（3） C01B032/15（3）
发明人 JANG B Z（2） ZHAMU A（2）
公开年 2016（14） 2015（10） 2017（4）
申请年 2015（28）
专利权人 JANG B Z（2） NANOTEK INST.（2） ZHAMU A（2）

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Multi-layered sheet for use as housing for electronic devices, has graphene-based barrier coating that includes specified amount of graphene and is formed on micro-arc oxidized layers and has prescribed thickness.

WU K, CHANG C, CHEN W

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Graphene mixed metal wire used for electric power cable, comprises graphene layer formed on surface of metal wire including copper alloy wire.

KIM H K, RHYU S H, YANG W S

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Chemically etching graphene-catalyzed silicon, comprises e.g. laminating graphene layer on the silicon layer, forming nano-templates on laminated graphene layer and forming graphene nanostructure with pattern mask.

SUK H C, JUNG K K, CHOI S H, KIM J K

Deposition method for electronic product involves depositing graphene atomic layer deposition (ALD) layer on top of transition metal ALD layer by ALD method using transition metal ALD layer as seed layer.

KOSTAMO J, MALINEN T, LI W

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y