国家/地区 中国（9）
IPC部 C（8） H（3）
IPC大类 C01（6） H01（3） C23（2）
IPC小类 C01B（6） H01L（3） C23C（2）
IPC C01B032/186（2） C23C016/02（2） H01L021/02（2）
发明人 DI Z（4） ZHANG M（4） CHEN Z（3）
DAI J（3） DENG R（3） GE X（3）
SUI Y（3） WANG G（3） WANG X（3）
WANG Z（3） XUE Z（3） YU G（3）
ZHANG H（3） ZHANG Y（3） ZHENG X（3）
公开年 2017（9）
申请年 2015（9）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（9）

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry transfer of graphene metal substrate comprises placing long graphene metal substrate on target substrate, heating under protective atmosphere at melting temperature or more and cooling to room temperature.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Method for preparing metal semiconductor alloy layer, involves performing ion implantation on surface of defective graphene-forming metal layer to obtain controllable density graphene defect.

ZHANG B, MENG X, YU W, DI Z, ZHANG M

Preparation of graphene powder by liquid phase stripped graphite includes taking polymerized polymer and organic solvent or macromolecule pre-polymer, shearing and stripping graphite raw material and uniformly dispersing in medium system.

DING G, ZHOU C, HE P, XIE X

Preparing graphene aerogel by adding graphene and amine-based polymer to solvent, dispersing to obtain graphene dispersion and freeze-drying graphene dispersion to obtain graphene aerogel.

HE P, ZHOU C, DING G, XIE X