国家/地区 中国（13） 美国（12） 世界知识产权组织（9） 欧洲专利局（EPO）（8） 日本（7） 韩国（7） 加拿大（4） 澳大利亚（3） 新加坡（2）
IPC部 B（16）
IPC大类 C01（16） B82（10） B01（7）
C23（7） H01（5） B32（4）
C03（3） A61（2） C30（2）
G01（2） G02（2）
IPC小类 C01B（16） B82Y（9） C23C（7）
B01J（6） B32B（4） B82B（4）
B01D（3） C03C（3） H01L（3）
C30B（2） G01N（2） G02B（2）
H01B（2）
IPC C01B032/186（16）
发明人 BEDWORTH P V（3） SWETT J L（3） HEISE S E（2）
SINTON S W（2）
公开年 2017（12） 2016（3）
申请年 2016（16）
专利权人 LOCKHEED MAR.（3） LOCKHEED COR.（2）

Light-absorption material consists of single and multiwalled carbon nanotubes, and graphene on walls.

KARAEVA A R K, KAZENNOV N V, MORDKOVICH V Z, ZHUKOVA E A

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Preparing graphene/zinc oxide nano-line array/three-dimensional foam composite material comprises e.g. chemical vapor deposition, hydrothermal synthesis and chemical vapor deposition.

YUE H, LIN X, GAO X, WANG B, YAO L, GUO E, SONG S, ZHANG H, GUAN E

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V