国家/地区 欧洲专利局（EPO）（13）
IPC部 C（13） B（8） H（7）
A（3） G（2）
IPC大类 C01（13） C23（8） H01（7）
B01（5） B82（4） B32（3）
A61（2） C30（2） G01（2）
IPC小类 C01B（13） C23C（8） B01J（4）
B82Y（4） H01L（4） B01D（3）
B32B（3） H01B（3） B82B（2）
C30B（2） G01N（2）
IPC C01B032/186（13）
发明人 BEDWORTH P V（3） SWETT J L（3） HEISE S E（2）
SINTON S W（2）
公开年 2017（12）
申请年 2016（13）
专利权人 LOCKHEED MAR.（3） LOCKHEED COR.（2）

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Preparation of three-dimensional graphene or graphene-like foam for e.g. electrode involves providing three-dimensional metal foam framework, depositing graphene onto metal foam framework, and introducing product in electrochemical cell.

PAEZ DUENAS A, GARCIA SAN LUIS J, ALIA MORENOORTIZ F J, BARRANCO V, CLIMENT E, DE ANDRES A, ROJO J M, PEDROS J, MARTINEZ J, BOSCA A, CALLE F

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Electric conductor i.e. single wire, for conducting electrical power in flow direction of e.g. stator, of e.g. generator, has metallic conductor elements surrounded by graphene layers and stacked one above other in perpendicular direction.

FILIPENKO M, BEASLEY P

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V