国家/地区 日本（8）
IPC部 H（8） C（4） B（3）
G（2）
IPC大类 H01（8） C01（4） B82（3）
C08（2） C23（2） G01（2）
IPC小类 H01L（8） C01B（4） B82Y（3）
C08G（2） C23C（2） G01J（2）
IPC H01L051/05（4） C01B032/184（3） H01L051/30（3）
B82Y020/00（2） B82Y030/00（2） B82Y040/00（2）
G01J001/02（2） H01L029/06（2） H01L029/16（2）
H01L029/786（2） H01L031/08（2）
发明人 YAMAGUCHI J（3） HAYASHI H（2） YAMADA Y（2）
公开年 2020（4） 2021（3）
申请年 2019（8）
专利权人 FUJITSU LTD（8）

Optical sensor, has graphene layer provided with main surface to which light is irradiated, and plasmon antenna arranged at main surface, where area of antenna is smaller than area of another antenna at planar view from direction perpendicular to surface.

MIYATAKE T

Light detection element for detecting light, has one electrode which is in contact with graphene layer, where another electrode is in contact with graphene layer and comprises different material from one electrode.

SUDA S

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Graphene nanoribbon network membrane used for forming electronic device, comprises graphene nanoribbon(s) arranged at preset angle and containing orbital hybrid six-membered ring junction with each other.

YAMAGUCHI J, HAYASHI H, YAMADA Y

Graphene nano ribbon for electronic apparatus comprises first region of one side of length direction which has oxy group and/or dioxy group, and second region of other side of length direction which has hydrogen atom and/or hydroxyl group.

OTOMO M, HAYASHI H, YAMADA Y

Variable resistance element used in semiconductor devices, comprises graphene layer, and eutectic alloy layer in contact with graphene layer.

YAMAZAKI K

Photo detection element of optical sensor used in imaging device, has infrared light-receiving layer that includes graphene layers and spacer layers that are alternately stacked, where infrared light passes through spacer layers.

SATO S, NISHINO H, KONDO D, HAYASHI K, KONDO T

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J