国家/地区 中国（5） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） H01L（4） C01B（2）
H01M（2）
IPC C23C014/06（8）
发明人
公开年 2022（4） 2021（2） 2023（2）
申请年 2021（8）
专利权人

Current collector for lithium metal battery, has graphene single layer that is formed on conductive thin film, metal nanoparticles that are provided on graphene layer, and concave-convex portion including protrusion and concave portion.

JUNG H T, SUK J D, WU M H, KIM J Y, MOON S, JIN H Y, BOH K G

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.

MA J

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W

Preparing lithium ion battery composite diaphragm comprises e.g. dispersing graphene oxide in distilled water, adding dopamine, reacting, cooling, filtering, drying, placing in magnetron sputtering device, and sputtering onto thin film.

FANG Y

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B