国家/地区 日本（8）
IPC部 C（8）
IPC大类 C01（8） H01（6） B01（2）
B82（2） C30（2）
IPC小类 C01B（8）
IPC H01L029/786（4） C01B032/186（3） B82Y040/00（2）
C01B032/182（2） H01L021/02（2） H01L021/336（2）
H01L031/08（2） H01L051/05（2） H01L051/30（2）
发明人 HAYASHI K（4） KONDO O（3） YAMAGUCHI J（2）
公开年 2022（5） 2023（2）
申请年 2021（8）
专利权人 FUJITSU LTD（8）

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.

HAYASHI K

Graphene nanoribbon used as channel for electronic device e.g. top gate-type field effect transistor and thin film transistor, is fused cyclic compound.

YAMAGUCHI J, HAYASHI H, YAMADA Y

Graphene nanoribbon used for semiconductor device, comprises semiconductor graphene nanoribbon having width and metallic graphene nanoribbon bonded to one end of semiconductor graphene nanoribbon in length direction and having width larger than width of semiconductor graphene nanoribbon.

YAMAGUCHI J