国家/地区 中国（4） 韩国（2）
IPC部 C（6） H（6）
IPC大类 C30（6） H01（6） C23（2）
IPC小类 C30B（6）
IPC H01L021/02（6）
发明人
公开年 2021（6）
申请年 2021（6）
专利权人

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B

Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.

LEE I, WUK L W