国家/地区 德国（15）
IPC部 H（15）
IPC大类 H01（13） C01（3） C23（3）
C25（3） G01（2） H05（2）
IPC小类 H01L（5） H01M（5） C01B（3）
C23C（3） C25D（3） H01R（3）
H05K（2）
IPC H01M010/0525（4） H01L021/336（3） H01L029/06（3）
H01L029/16（3） H01L029/24（3） H01L029/66（3）
H01L029/78（3） H01M004/02（3） H01M004/04（3）
H01M004/62（3） C01B032/198（2） C23C016/04（2）
C23C026/00（2） H01L021/02（2） H01L021/34（2）
发明人 KHADERBAD M A（2） KUBO T（2） LI Y（2）
MA H（2） SATHAIYA D M（2） SHEN T（2）
SHEN Z（2） SHIMIZU T（2） YE N（2）
公开年 2021（15）
申请年 2021（15）
专利权人 TAIWAN SEMIC.（3） YAZAKI CORP（2）

Complementary metal-oxide-semiconductor (CMOS) based image sensor has specific line that crosses and in contact with free layer of magnetic tunnel junction in corresponding row, and other lines electrically connected to pinned layer of magnetic tunnel junction in corresponding column.

JAISWAL A R, JACOB A P, BIAN Y, PRITCHARD D C, JAISWAL A

Rolling bearing arrangement for fixing axles and shafts, has current-conducting element comprising spongy support structure lying in current flow, which is provided in sections with graphene-containing or completely graphene-based coating.

BIRKEN A

Preparation of silicon-carbon composite material used as anode material in battery cell, involves mixing silicon particles, carbon compound, and dispersant, thermally processing mixture, and heat-treating thermally processed intermediate product preset temperature.

GENTISCHER H, BIRO D, HABERZETTL P, DREWS M, HORZEL J, DOLD L, HARBOR J P, DRUCE M, HOSEL J

Secondary batter used for vehicle, has positive electrode and negative electrode, in which negative electrode has fluorine-containing solvent, current collector, negative electrode active material, and graphene.

YAMAZAKI S, IWAKI Y, SUZUKI K, KADOMA H, YAMAZAGI S, IWAKI K, MONTAKE H

Method for forming semiconductor device, involves configuring gate structure, source and drain components, semiconductor structure and two-dimensional material layer, and utilizing semiconductor structure and two-dimensional material layer as channels between source and drain components.

SHEN Z, KHADERBAD M A, MA H, SATHAIYA D M, ABHIJITH K M, SHEN T, DHANYAKUMAR S M

Method for field mapping cell under load, involves positioning Hall effect sensor at first position adjacent to face of cell, applying load to cell, and measuring output of hall effect sensor.

GLASS H, MATTHEWS A

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Assembly for a battery, includes thermal management multilayer sheet equipped on surface of an electrochemical cell, and thermal management multilayer sheet comprising thermally-insulating layer.

CHURCHILL C, DAIGLE R C, KILHENNY B, DAGLE R

Preparing lithium carboxymethyl cellulose used in preparation of cathode electrode, involves mixing cellulose, crosslinking agent and sodium hydroxide in ethanol solution, vacuumizing, alkalizing, etherifying, acidifying, and adding to lithium salt-ethanol solution for substitution reaction.

NIE Z, XIA Y, LI Y, ZHANG H, DU K, YU Q, ZHOU Z, LIU W, HE Y, ZHANG J, NIE B, XIA I, LEE F, DOU K, ABOVE C, ZHOU Z L, HUH Y, JIANG J, NIE Z Z, LI Y Q, DU Q