国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） H01L（3） G01L（2）
H01B（2）
IPC C23C016/34（8）
发明人 LU J（2）
公开年 2022（5） 2023（3）
申请年 2022（8）
专利权人

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Flexible pressure sensor based on two-dimensional quantum tunneling force-sensitive mechanism, has conformal carbon nano-film composed of graphene-structure of nano-wall and flexible substrate.

CHENG G, WEI D

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Graphene sensor composite heat protection structure, comprises substrate layer, graphene sensitive layer, nitride isolation layer, alumina protective layer, and high temperature ceramic protective coating, where substrate layer is provided with a graphene sensitive layer.

LI M, ZHANG H, WANG J

Manufacturing graphene of pressure sensor, comprises e.g. manufacturing sensor structure, manufacturing mask plate of each layer of sensor structure and depositing insulating layer on silicon substrate surface.

WU X, RUI L, ZHANG Q, LU J, LI Y

Producing insulating high thermal conductivity graphene film comprises placing activated base film in vapour deposition chamber, taking diborane and disilane as precursor material and ammonia and nitrogen as carrier and introducing argon gas for deposition, carbonizing and graphitizing, and rolling.

ZHOU Z, ZHU Q, ZHENG Z

Preparing gallium nitride film used for blue light emitting diode, comprises e. g. drying pre-processed substrate with high-purity nitrogen, adding into vacuum reaction chamber, heating, stabilizing first preset time, and using remote ammonia plasma to process second preset time.

YAN T, YE Z, REN W, WANG R, ZHANG Y