国家/地区 台湾（6）
IPC部 H（6） C（5）
IPC大类 H01（6） C01（5） C23（5）
IPC小类 H01L（6） C01B（5） C23C（5）
H01J（3）
IPC C23C016/26（5） C23C016/50（3） H01J037/32（3）
H01L021/768（3） C01B031/04（2） C01B032/186（2）
C23C016/455（2） C23C016/54（2） H01L021/02（2）
H01L021/033（2） H01L021/285（2） H01L023/532（2）
发明人
公开年 2021（2） 2022（2）
申请年 2021（3） 
专利权人 APPLIED MATERIALS INC（6）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Forming interconnect structure, comprises e.g. etching patterned interconnect stack and first etch stop layer to form first conductive lines and second conductive lines and expose top surface of first etch stop layer and barrier layer.

JIANG H, LU C, REN H, LANG C, HWANG H D, NAIK M

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H