国家/地区 中国（10）
IPC部 C（7） H（3）
IPC大类 C01（6） C23（3） H01（3）
IPC小类 C01B（6） C23C（3） H01L（2）
IPC C01B032/186（3） C23C016/26（3） C01B032/196（2）
发明人 LIU Z（8） PENG H（6） ZHANG J（5）
JIA K（3） LIU X（3） SUN L（3）
DENG B（2） GAO Z（2） LI Y（2）
LIU H（2） SUN Y（2） XU S（2）
公开年 2019（10）
申请年 2019（7）  2018（3） 
专利权人 BEIJING GRAPHENE INST（10）

Graphene film roll-to-roll production device comprises a vacuum cavity, a vacuum pump assembly and a filling assembly, where the process gas further comprises one monitoring component, and a parameter control assembly.

PENG H, YANG Q, DONG G, ZHA B, LIU Z

Cleaning method of graphene comprises rolling the surface of graphene through curved body provided with adsorbent on curved surface.

LIU Z, PENG H, SUN L, LI Y, LIU X, LIN L, ZHANG J, JIA K

Method for transferring graphene wafer, involves forming graphene wafer on sapphire-metal substrate and peeling graphene wafer from metal substrate by performing electrochemical bubbling.

PENG H, LIU Z, YAN R, DENG B, TANG J, DU Y, CAI A

Cleaning graphene surface for preparing clean graphene used in e.g. transparent electrode, involves providing carbon nanomaterial, contacting nanomaterial with graphene surface, applying pressure and separating nanomaterial from graphene.

LIU Z, PENG H, LI Y, SUN L, WANG K, ZHANG J, JIA K, LIU X

Graphene powder continuous discharge preparation method involves passing inert gas into microwave plasma chemical vapor deposition system, generating plasma, passing carbon source, and performing graphene powder vapor phase growth.

ZHANG J, SUN Y, LIU H, GAO Z, XU S

Transparent conductive glass comprises transparent glass layer, metal conductive network layer and graphene layer, where metal conductive network layer comprises layer of metal nanowires or metal nanowires and metal grid layer.

LIU Z, SHAN J, CHEN Z, GAO X

Preparation of graphene powder by subjecting carbon source to chemical vapor deposition process without using substrate.

ZHANG J, XU S, GAO Z, SUN Y, LIU H

Graphene film transfer apparatus for transferring graphene film to target substrate, has peristaltic component for controlling flow rate of liquid in chamber, where graphene film is transferred to target substrate along with level shift.

LIU Z, PENG H, LIU X, ZHANG J, SUN L, JIA K

Preparing multilayer graphene involves providing copper foil, bonding copper foil to substrate, annealing copper foil after bonding substrate, surface of annealed copper foil is subjected to chemical vapor deposition to grow graphene.

PENG H, WANG Y, DENG B, LIU Z

Preparation of LED epitaxial wafer involves arranging graphene layer on substrate and aluminum nitride layer on graphene layer, stripping aluminum nitride layer from substrate, and arranging LED epitaxial layer on aluminum layer.

LIU Z, HU Y, GAO P