国家/地区 中国（6）
IPC部 C（3） B（2） H（2）
IPC大类 B82（2） C01（2） H01（2）
IPC小类 B82Y（2） C01B（2） H01L（2）
IPC B82Y040/00（2） C01B031/04（2） C01B032/184（2）
发明人 CHEN X（4） GUO L（4） JIA Y（3）
SHI D（2） ZHANG G（2）
公开年 2016（3） 2015（2）
申请年 2014（6）
专利权人 CHINESE ACAD SCI PHYSICS INST（6）

UV detector of graphene coated silicon carbide nano wire, has silicon oxide/silicon substrate that includes graphene layer whose both ends are arranged with electrodes, and whose back side is arranged with back gate electrode.

CHEN X, GUO L, JIA Y

Wavelength tunable UV detector has support substrate that is arranged with aluminum gallium nitride layer and graphene layer whose ends are arranged with electrodes on which electrode leads are arranged via bonding.

CHEN X, GUO L, WANG W, ZHAO M

Epitaxial growth of graphene junction on semi-insulating silicon carbide wafer surface for e.g. multipolar device, involves cleaning semi-insulating silicon carbide wafer surface, implanting boron ion on wafer and annealing wafer.

CHEN X, GUO L, JIA Y, WANG Y

Growing P-type graphene comprises, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.

CHEN X, GUO L, JIA Y, LU W, GUO Y

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Method for processing graphene super-lattice nanometer structure, using atom force microscope, involves performing anisotropic etching process on artificial graphene structure using hydrogen-containing plasma.

SHI D, ZHANG G, CHENG M