国家/地区 韩国（6） 美国（3）
IPC部 B（4） C（4） H（4）
IPC大类 H01（4） B82（3） C01（3）
C23（2）
IPC小类 B82Y（3） C01B（3） H01L（3）
C23C（2）
IPC B82Y040/00（2） B82Y099/00（2） C01B031/02（2）
发明人 PARK K（3） CHOI S Y（2） KIM J Y（2）
公开年 2012（6）
申请年 2011（5） 
专利权人 ELECTRONICS TELECOM RES INST（6）

Manufacturing method of nanoporous membrane used in separation device, involves transferring graphene nanostructure with pore of columnar structure to upside of columnar structure.

LEE D S, PARK S H, CHOI S Y, JUNG M Y, KIM S H

Method of forming graphene device, involves patterning protection layer and seed layer to form protection pattern and seed pattern with respective lengths in respective directions.

PARK K

Method for forming electrochemical capacitor, involves forming current collector, forming metallic film in top part of current collector, and forming electrode on top part of metallic film by utilizing graphene.

KIM W, YOON H G, KU K H, KIM B W

Formation of graphene substrate for graphene device, involves forming substrate, forming catalyst layer on substrate, forming graphene and optionally removing catalyst layer.

PARK K

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M

Graphene oxide memory device e.g. aluminum/graphene oxide/aluminum/polyethersulfone memory device, has electron channel layer placed on lower electrode by using graphene oxide, and upper electrode placed on electron channel layer.

CHOI S Y, KIM J Y, JEONG H Y, YOOL C S, KIM J, YOUNG J H