国家/地区 日本（6）
IPC部 H（5） C（2）
IPC大类 H01（5） C01（2）
IPC小类 H01L（5） C01B（2）
IPC H01L029/786（5） H01L021/336（4） H01L029/06（4）
H01L051/05（3） H01L051/30（3） C01B031/02（2）
C01B031/04（2） H01L029/161（2）
发明人 JIPPO H（2） KONDO T（2）
公开年 2013（6）
申请年 2011（6）
专利权人 FUJITSU LTD（6）

Method for manufacturing semiconductor device for forming graphene on insulating film, involves forming catalyst metal film on substrate, where insulating film is formed on grapheme metal film.

KONDO T

Electronic apparatus for top gate structure, has substrate, where grapheme sheet is formed through gate insulating film on substrate, and source electrode is formed in end of graphene sheet.

JIPPO H

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Electronic apparatus for switching electric current, comprises substrate and graphene layer and gate insulating layer that are formed on substrate, where source electrode is formed in one end of graphene layer.

JIPPO H

Semiconductor device has graphene electrode, which is formed in two dimensional structure, where boron nitride semiconductor layer is coupled with graphene end of graphene electrode.

KONDO T, IWAI D

Manufacture of graphene ribbon for electronic device, involves forming catalyst metal film having stripe-form twin crystal region, and selectively growing graphene on twin crystal region of catalyst metal film.

HAYASHI K