国家/地区 日本（6） 美国（3）
IPC部 H（5） C（4） G（2）
IPC大类 H01（5） C01（4） G01（2）
IPC小类 H01L（5） C01B（4） G01N（2）
IPC H01L051/30（4） H01L051/40（4） C01B031/02（3）
H01L021/336（3） H01L029/786（3） H01L051/05（3）
G01N027/12（2） H01L021/02（2） H01L021/04（2）
H01L021/28（2） H01L021/768（2） H01L023/532（2）
H01L029/16（2） H01L029/66（2） H01L029/778（2）
发明人 JIPPO H（2） SATO S（2）
公开年 2016（4） 2015（2）
申请年 2015（7）
专利权人 FUJITSU LTD（7）

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J

Manufacturing method for wiring structure involves removing catalytic material and portion of graphene on insulating film to make graphene remain only in trench.

SATO M

Gas sensor applied to medical treatment and diagnostic apparatus, has first graphene layer that is laminated on barrier layer, and top metal electrode that is provided so that first graphene layer is partially exposed.

HARADA N

Gas sensor i.e. olfaction sensor, for use during medical treatment, has detection film formed with semiconductor material, graphene contact with side of detection film, and metal electrode contact with other side of detection film.

YAMADA A, SATO S

Electronic apparatus such as transistor has hole portions for scattering edge portions of graphene element respectively, with deficient carbon atoms, and metals connected with edge portions of graphene element.

JIPPO H

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M