国家/地区 日本（7） 欧洲专利局（EPO）（3） 美国（3）
IPC部 C（5） H（5） B（3）
IPC大类 C01（5） H01（5） C08（4）
B82（3） C07（3）
IPC小类 C01B（5） H01L（5） C08G（4）
B82Y（3） C07C（2）
IPC H01L029/786（4） H01L051/05（4） H01L051/30（4）
B82Y030/00（3） B82Y040/00（3） C01B032/182（3）
C01B032/184（3） C08G061/12（3） C07C025/18（2）
C07C025/22（2） C08G061/10（2） H01L021/336（2）
H01L029/06（2） H01L029/16（2） H01L029/872（2）
发明人 OTOMO M（7）
公开年 2020（3） 2018（2） 2022（2）
申请年 2018（3）  2020（3） 
专利权人 FUJITSU LTD（7）

Semiconductor device for information processing apparatus, has sauce electrode, drain electrode and gate electrode that are connected to channel layer, and are provided between sauce electrode and drain electrode.

OTOMO M

Graphene nanoribbon used as channel for e.g. semiconductor device, is 2,12-bis(anthracen-9-yl)-6,16-dithiapentacycloicosa-1,3,5(9),7,10,12,14,17,19-nonaene-based compound or 2,12-bis(anthracen-9-yl)-6,18-dithiapentacycloicosa-1,3,5(9),7,10,12,14,16,19-nonaene-based compound.

OTOMO M, SATO S, HAYASHI H, YAMADA Y

Graphene nano ribbon for electronic apparatus comprises first region of one side of length direction which has oxy group and/or dioxy group, and second region of other side of length direction which has hydrogen atom and/or hydroxyl group.

OTOMO M, HAYASHI H, YAMADA Y

New graphene nanoribbon precursor having structure useful for producing graphene nanoribbon.

OHTOMO M, SATO S, OTOMO M

Electronic apparatus for use as top-gate-type FET, has graphene nano ribbon (GNR) layers whose work functions are different, and laminated main portion of first and second GNR layers are provided with charge-transfer complex.

OTOMO M

New 2,6-di(1,1'-binaphthyl-2-yl)biphenyl derivatives useful as a precursor of a graphene nanoribbon.

OHTOMO M, OTOMO M

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M