国家/地区 日本（7） 台湾（3） 美国（3） 世界知识产权组织（3）
IPC部 H（5） C（4） B（3）
IPC大类 H01（5） C01（4） B82（2）
IPC小类 H01L（5） C01B（4） B82Y（2）
IPC C01B031/02（4） H01L029/06（4） C01B032/182（3）
H01L021/28（3） H01L029/786（3） H01L051/05（3）
H01L051/30（3） H01L051/40（3） B82Y030/00（2）
B82Y040/00（2） C01B032/15（2） C01B032/18（2）
H01L021/3205（2） H01L021/336（2） H01L021/768（2）
发明人 SATO S（3） JIPPO H（2）
公开年 2014（7）
申请年 2013（3）  2012（2）  2014（2） 
专利权人 FUJITSU LTD（7）

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Electronic apparatus, particularly graphene transistor, comprises electrode electrically connected to graphene film, where graphene film has portion whose density of states is higher than another portion in connection portion with electrode.

HARADA N

Method for predicting electric-conduction characteristic of e.g. graphene nano ribbon used for electronic apparatus, involves producing structural model inserted with channel region set as analysis object group with electrode.

JIPPO H

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K