国家/地区 日本（9）
IPC部 H（8） G（4） B（3）
C（3）
IPC大类 H01（7） G01（4） H10（4）
C01（3） B82（2）
IPC小类 H01L（7） G01J（4） C01B（3）
H10K（3） B82Y（2） G01N（2）
IPC G01J001/02（4） H01L029/786（3） H10K071/10（3）
H10K085/20（3） B82Y040/00（2） H01L021/336（2）
H01L027/146（2） H01L029/16（2） H01L031/0232（2）
H10K010/40（2）
发明人 HAYASHI K（2） KONDO D（2） SUDA S（2）
YAMASHITA H（2）
公开年 2023（10）
申请年 2021（8） 
专利权人 FUJITSU LTD（10）

Production of graphene nanoribbons used in semiconductor device e.g. field effect transistor for electronic devices, involves synthesizing polyaromatic-based polymer by eliminating specific group from polymer, and bonding carbon atoms of aromatic ring from which specific group is eliminated.

YAMAGUCHI J

Manufacturing method of graphene optical sensor, involves forming resist layer on side opposite to metal layer, forming pattern on resist layer by imprint and etching graphene using resist layer on which pattern is formed as mask.

SUDA S

Graphene optical sensor for use in e.g. night vision device, has set of plasmonic antennas provided on surface of graphene layer between first and second electrodes and arranged periodically in first direction and second direction.

YAMASHITA H

Sensor module for gas sensor, has dielectric layers that are provided at constant interval from graphene layer in normal direction of graphene layer on each of first surface side and second surface side of graphene layer.

MATSUMIYA Y

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Majorana quantum bit for use in quantum computer, has first layer provided between first edge and first s-wave superconductor layer and for penetration of Cooper pairs from first superconductor layer to first edge by proximity effect.

OHTOMO M, KAWAGUCHI K

Optical sensor device e.g. graphene-based optical sensor device applied to e.g. automatic door, has resin layer which is configured to cover light receiving region of graphene layer and is transparent to light to be detected.

NORIMATSU M, KONDO D

Manufacturing method of electronic apparatus, involves placing graphene layer in contact with liquid film, placing laminated structure on liquid film and vaporizing liquid film to bring graphene layer into contact with second substrate.

SUDA S

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Infrared sensor for detecting thermal radiation, has control electrode that controls distribution of Fermi energy of second graphene layer, and controls distribution between first electrode and second electrode to be non-target.

YAMASHITA H