国家/地区 韩国（8） 美国（8） 中国（3） 世界知识产权组织（3）
IPC部 C（8） B（7） H（4）
IPC大类 C01（8） B82（5） C23（4）
H01（4） B01（2） B29（2）
B32（2） B41（2）
IPC小类 C01B（8） B82Y（5） C23C（4）
H01L（4） B01J（2） B29C（2）
B32B（2） B41M（2） B82B（2）
IPC C01B031/04（6） C01B031/02（5） B82Y040/00（4）
H01L021/02（4） H01L029/16（4） B82Y030/00（3）
B32B037/02（2） B32B037/14（2） B32B038/10（2）
B82B003/00（2） C23C016/26（2） H01L029/786（2）
H01L051/52（2）
发明人 CHO S（8）
公开年 2012（3） 2011（2） 2017（2）
申请年 2011（5）  2016（2） 
专利权人 HANWHA TECHWIN CO LTD（8）

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D

Method of manufacturing grapheme used in FET, involves forming graphene on catalyst layer by cooling catalyst layer, and taking out supporting belt, on which catalyst layer is loaded and graphene is formed, from chamber to outside.

CHO S, WON D, CHO S M, WON D K, CHO S H

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D

Manufacturing method of graphene transfer film involves applying air pressure to at least one of graphene growth film and carrier film so that graphene and carrier film are attached to each other.

CHO S, SONG Y, CHO S H, SONG Y I

Method for transferring graphene from graphene forming structure onto desired object e.g. circuit substrate, involves separating oxide layer from metal catalyst layer and removing metal catalyst layer by using etching solution.

CHO S, WON D, CHO S H, WON D K