国家/地区 美国（8） 世界知识产权组织（8） 中国（6） 英国（6） 德国（5） 日本（4） 台湾（4）
IPC部 H（6） B（4） C（4）
IPC大类 H01（6） B82（2）
IPC小类 H01L（4） B82Y（2） H01M（2）
IPC H01L051/05（4） H01L021/336（3） H01L029/16（3）
H01L029/66（3） H01L029/78（3） H01L029/786（3）
H01L051/30（3） B82Y010/00（2） H01L021/04（2）
H01L021/28（2） H01L021/316（2） H01L021/768（2）
H01L027/12（2） H01L029/06（2） H01L051/40（2）
发明人 FARMER D B（2） LIN Y（2） LIN Y M（2）
公开年 2011（4）
申请年 2010（3） 
专利权人 IBM UK LTD（8）

Carbon dioxide membrane filter used for capturing carbon from flue gas, comprises graphene sheet(s) interspersed with pores that are open carbon bonds filled and tipped with element making up crown pore.

LUAN B, ELMEGREEN B G

Battery includes an anode, an electrolyte comprising a solvent and at least one ion conducting salt and a cathode comprising a metal halide salt incorporated into an electrically conductive material.

KIM J, NA Y, ALLEN R, ALLEN R D, LUO Y

Battery useful as a lithium-oxygen battery, comprises a lithium anode, an electrolyte having a high solubility for lithium ions and oxygen, and a thin graphene cathode formed on a substrate.

AKCA E, AKGUN C, DEMIRCI G, FARMER D B, HAN S, MAUNE H T, OH D

Detecting translocation events associated with first target molecule while avoiding multiple binding events to first target molecule comprises obtaining assembly including first graphene sheet bounded by solid-state membranes and nanopore.

BALDAUF J S, DOWNTON M, GUNN N, HARRER S, KANNAM S, SCHIEBER C, WAGNER J M, GUNN N J, KANNAM S K

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L

Graphene FET comprises a gate stack including a seed layer, a gate oxide formed over the seed layer and a gate metal formed over the gate oxide, an insulating layer, a graphene sheet, a spacer, and a source contact and a drain contact.

LIN Y, JENKINS K A, VALDES GARCIA A, VALDESGARCIA A, GARCIA A V, VALDES G A, LIN Y M

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B