国家/地区 中国（6） 美国（2） 世界知识产权组织（2）
IPC部 H（5） G（2）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/02（2） H01L029/16（2） H01L045/00（2）
发明人 LIU M（3） BANERJEE W（2） BENAGI R（2）
LIU Q（2） LUO J（2） LV H（2）
SUN H（2） WANG L（2） ZHANG K（2）
ZHAO C（2）
公开年 2016（4） 2015（2）
申请年 2015（6）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（6）

Method for growing graphene that is utilized in semiconductor device, involves providing single crystal of silicon or germanium substrate, and growing graphene layers on epitaxial layer by chemical vapor deposition.

LUO J, ADAMSON H H, WANG L, ZHAO C, WANG G

Non-volatile resistive memory, has graphene barrier layer stopping easily oxidizable metal ions from migrating into inert metal electrode through resistive functional layer under effects of electric field during programming process.

LIU Q, LIU M, SUN H, ZHANG K, LONG S, LV H, BANERJEE W, BENAGI R

Growing graphene involves forming single crystal metal silicide layer on substrate, and growing graphene layer on metal silicide layer using chemical vapor deposition method.

LUO J, ZHAO C

Method for calculating cut-off frequency of small signal model of graphene transistor, involves obtaining cut-off frequency of MOSFET, and establishing feedback modification small signal equivalent model.

LU N, LIU M, WANG W, XU G, LI L, WANG L

Flexible substrate based three-dimensional packaging heat radiation structure, has graphene radiating fin fixed to contact surface of chip package body, and graphite heat abstractor provided with metal carrier chip.

CAO L, GUO X, HOU F, WAN L, SU M, WANG Q, ZHOU Y

Storage device, comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where resistive functional layer is located on lower barrier layer graphene.

LV H, LIU M, LIU Q, SUN H, ZHANG K, BENAGI R, BANERJEE W