国家/地区 中国（7） 美国（4） 世界知识产权组织（4）
IPC部 H（7） B（2）
IPC大类 H01（6） B82（2）
IPC小类 H01L（6） B82Y（2）
IPC H01L021/336（4） H01L029/06（4） H01L029/78（4）
B82Y040/00（2） B82Y099/00（2） H01L021/28（2）
H01L029/16（2） H01L029/66（2） H01L029/775（2）
H01L029/786（2）
发明人 LIANG Q（7）
公开年 2013（4）
申请年 2012（3）  2011（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（7）

Semiconductor structure manufacturing method, involves forming interlayer medium layer on contact hole of metal-graphene, and filling electric conduction material in contact hole.

LIANG Q, YE T, ZHU H, ZHONG H

Analog-to-digital converter, has multi-path distributor provided with multiple graphene channels and gate contact, where included angle is formed between each graphene channel and gate contact.

JIN Z, LIU X, YE T, CHEN D, LIANG Q, ZHU H, ZHONG H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Manufacturing method for graphene device, involves providing substrate, where substrate comprises insulating layer and semiconductor layer, forming source/drain contact plug on back gate electrode.

ZHU H, LIU X, ZHONG H, LIANG Q, JIN Z

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T