国家/地区 中国（6）
IPC部 H（4） B（2）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/336（3）
发明人 GU K（5） ZHU H（4） NIE P（3）
SU Y（3） YANG J（2）
公开年 2014（6）
申请年 2013（4）  2012（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（6）

Non-standard electrostatic force switch, has substrate fixed with graphene along arrangement direction, and support electrode connected with source and drain electrodes that are electrically connected together.

SU Y, YANG J, ZHU H, NIE P, GU K

Semiconductor device manufacturing method, involves forming graphene layer with substrate layer, where medium layer is formed with upper end of graphene layer and bump structure, and forming mask side wall with etching layer.

ZHU H, GU K

Semiconductor device manufacturing method involves removing dielectric layer and metal layer, so that graphene layer is transferred onto side of another dielectric layer.

ZHU H, GU K

Interconnection structure, has lower-layer wiring structure formed on substrate, and shielding layer formed on lower-layer wiring structure and arranged with graphene part and upper-layer wiring structure.

SU Y, YANG J, ZHU H, NIE P, ZHAO C, GU K

Insulation gate FET, has graphene conductive layer formed with gate oxide layer and semi-conductor layer, where semi-conductor layer is formed with channel area and cell area.

ZHU W, HU A, LU S, ZHU Y

Graphene-based sequencing device has insulating layer on substrate, graphene nanoribbons located on insulating layer, and grain boundary located in graphene nanoribbons nanopores, in which nano-holes have boundary graphene electrode.

SU Y, NIE P, GU K