国家/地区 中国（7）
IPC部 H（7） B（3）
IPC大类 H01（7） B82（3）
IPC小类 H01L（7） B82Y（3）
IPC H01L029/06（5） H01L021/336（4） H01L029/78（4）
B82Y040/00（3） B82Y099/00（3） H01L021/20（2）
H01L029/16（2） H01L029/66（2） H01L029/775（2）
H01L029/786（2） H01L045/00（2）
发明人 ZHU H（5） LIANG Q（4） JIN Z（3）
LIU X（3） YE T（3） ZHONG H（3）
BANERJEE W（2） BENAGI R（2） LIU M（2）
LIU Q（2） LUO Z（2） LV H（2）
SUN H（2） WANG W（2） YIN H（2）
公开年 2012（2） 2013（2）
申请年 2011（2）  2012（2）  2015（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（7）

Non-volatile resistive memory, has graphene barrier layer stopping easily oxidizable metal ions from migrating into inert metal electrode through resistive functional layer under effects of electric field during programming process.

LIU Q, LIU M, SUN H, ZHANG K, LONG S, LV H, BANERJEE W, BENAGI R

Storage device, comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where resistive functional layer is located on lower barrier layer graphene.

LV H, LIU M, LIU Q, SUN H, ZHANG K, BENAGI R, BANERJEE W

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T