国家/地区 韩国（12） 美国（4） 世界知识产权组织（2）
IPC部 C（8） H（8） B（7）
IPC大类 H01（8） B82（4） C01（4）
B01（3） C23（3） B32（2）
C08（2）
IPC小类 C01B（4） H01B（4） B82Y（3）
C23C（3） H01L（3） B01J（2）
B32B（2） B82B（2） C08J（2）
H01M（2）
IPC B82Y030/00（3） C01B031/02（3） H01B001/04（3）
B82B001/00（2） B82B003/00（2） B82Y040/00（2）
C01B031/04（2） C08J005/18（2） C23C016/26（2）
发明人 KIM S O（4） CHOI S Y（3） HAN T H（3）
KIM J E（3） LEE K J（3） CHO B J（2）
CHOI I S（2） HONG B H（2） KANG K S（2）
KIM J Y（2） LEE S H（2） SEOK G G（2）
公开年 2011（9） 2012（3）
申请年 2010（12）
专利权人 KOREA ADV INST SCI TECHNOLOGY（12）

Graphene transistor manufacturing method involves forming drain and gate electrode on insulating layer that is laminated between source and drain regions.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Graphene hybrid material used for anode material of lithium ion secondary battery, comprises ferric phosphate and graphene.

KANG K S, KIM H G, SEOK G G, GYEOM K H

Positive electrode catalyst for forming macromolecular-electrolyte membrane for direct methanol fuel cell and direct ethanol fuel cell, contains two dimensional flat-type graphene doped with components excluding carbon.

WOO S I, LEE K R

Manufacture of porous graphene film involves forming polymer-graphene composite, dispersing composite in solvent, coating obtained solution on substrate, and heat-treating formed coating.

KIM S O, LEE S H, KIM H W

Method for manufacturing graphene-poly (3,4- ethylenedioxythiophene) co-extruded film, involves laminating graphene oxide layer, reducing laminated graphene oxide layer, and laminating poly (3,4- ethylenedioxythiophene) layer.

SEO T S, CHOI K S, FEI L, CHOI J S

Graphene composition having liquid crystalline properties, useful in liquid crystal nanocomposite, liquid crystal polymer nanocomposite, energy storage materials and photonics, comprises specific amount of graphene (e.g. graphite).

KIM S O, KIM J E, HAN T H, LEE S H, KIM J Y

Manufacturing method of flexible resistance switching memory device e.g. RAM, involves forming graphene oxide layer by mixing methanol and water and arranging on bottom electrode layer on printed circuit board.

CHO B J, HONG S K

Forming a graphene layer used in e.g. electric devices, or transparent electrodes involves forming metal thin film on substrate; injecting carbon ions into the thin film; and heat-treating the carbon ions injected into the thin film.

CHO B J, MUN J H

Method for manufacturing e.g. graphene antidot lattice that is utilized for device fabrication, involves forming self-assembled nanostructure, and etching graphene thin film from nanostructure, where graphene thin film is utilized as mask.

KIM S O, KIM J Y, CHOI S Y, KIM J E, JEONG S J, HAN T H