国家/地区 韩国（6） 美国（2）
IPC部 G（6） C（3） B（2）
IPC大类 G03（6） C01（3） B01（2）
IPC小类 G03F（6） C01B（3） B01J（2）
IPC G03F001/22（6） G03F001/62（6） C01B032/184（2）
C01B032/194（2） G03F001/64（2） G03F007/20（2）
发明人 KIM S K（6）
公开年 2022（4） 2023（2）
申请年 2021（4）  2022（2） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（6）

Pellicle used for exposure to extreme UV rays, comprises substrate having opening formed in central portion, etch stop layer formed on substrate to cover opening, and nanoporous graphene layer in which nanopores are formed on graphene layer, provided on etch stop layer.

KIMHYUNGKEUN, MI K H, KIM S K, JOJINWOO, KIM H Y

Method for manufacturing non-thick free-standing nanomembrane by using assist layer of carbon material, involves forming assist layer of carbon material on nano-thick membrane thin film, and selectively dry-etching assist layer.

KIMHYUNGKEUN, KIM S K, MI K H, KIM Y K, LIM H M

Pellicle for extreme ultraviolet exposure, has pellicle layer that is provided with yttrium compound-containing layer containing ytterbium-based compound.

KIMHYUNGKEUN, KIM S K, MI K H, LIM H M, KIM H Y, JEONJUNHYUCK, LEE S M

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Pellicle i.e. consumable component for protecting mask from contaminants in lithography process for semiconductor or display manufacturing, has substrate whose central portion is formed with opening, and pellicle layer containing amorphous carbon and core layer, formed on support layer.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K, JEONJUNHYUCK, LEE S M