国家/地区 韩国（18）
IPC部 C（18） H（9） B（7）
IPC大类 C01（12） H01（9） B82（6）
C25（4） B32（3） C08（3）
C09（3） C23（3） B01（2）
IPC小类 C01B（12） B82Y（5） H01B（5）
B82B（4） B32B（3） C08K（3）
C23C（3） C25D（3） B01J（2）
C08L（2） C09C（2） H01L（2）
H01M（2）
IPC C01B031/04（7） C01B031/02（5） B82B003/00（4）
B82Y040/00（4） B82Y030/00（3） C08K003/04（3）
B32B009/00（2） C01B032/182（2） C09C001/44（2）
C23C016/26（2） C25D001/04（2） H01B001/04（2）
H01B001/24（2）
发明人 LEE S H（18）
公开年 2011（3） 2016（3） 2010（2） 2017（2） 2018（2）
申请年 2009（3）  2011（3）  2015（3）  2010（2）  2013（2）  2016（2） 
专利权人 KOREA INST SCI TECHNOLOGY（18）

Artificial solid electrolyte interphase of anode used for secondary battery i.e. lithium metal secondary battery, comprises multi-walled carbon nanotube thin film or reduced graphene oxide thin film to protect anode material.

CHO W I, KIM M S, LEE S H, DO VAN D, NAH I W, OH I H, CHOWONIL, KIMMUNSEK, KIM M, DOVANDUNG

Manufacture of graphene thin film involves depositing metal catalyst on mold including substrate having graphene layer, forming graphene thin film on metal catalyst layer by chemical vapor deposition, and removing catalyst layer from mold.

LEE S H, BAE S, RHO H K, KIM T W, LEE S K, LEE D S

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Three dimensional materials quantum dots useful as metal ion and polymer stripping material, comprises a graphene-doped quantum, boron nitride-doped quantum dots, and inorganic chalcogenide-doped quantum dots containing heteroatom.

JO H I, KANG G S, LEE C H, LEE S H, JO S M, LEE D S, MOON B J

Cathode roll for manufacturing electroplated thin film, comprises graphene layer formed on cylindrical mold and pattern generating unit formed on the graphene layer, where the pattern generating unit has fine pattern.

LEE S H, RHO H K, BAE S, KIM T W, LEE D S

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Substrate for electro-forming plating e.g. metal key pad, has graphene layer which is formed on surface of conductive substrate.

LEE S H, RHO H K, KIM T W, BAE S K, SON D I

Photoelectrode for photoelectrochemistry cell, has semiconductor layer formed with gallium nitride group alloy, where gallium nitride group alloy is located on surface of substrate, and graphene layer located on semiconductor layer.

HA J S, LEE S H, BAE H J

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I