国家/地区 日本（11）
IPC部 C（11）
IPC大类 C01（9） H01（8） B82（4）
C23（4） B01（3）
IPC小类 C01B（9） B82Y（4） C23C（4）
H01L（4） B01J（3） H01B（2）
H01R（2）
IPC C01B031/02（7） C01B032/182（5） B82Y030/00（4）
C01B031/04（4） B82Y040/00（3） H01L021/02（3）
H01L029/06（3） H01L029/16（3） H01L029/786（3）
B01J035/02（2） C01B032/15（2） C01B032/18（2）
H01L021/20（2） H01L021/28（2） H01L021/3205（2）
发明人 SATO S（3） YAMAGUCHI J（3） HASEGAWA M（2）
HASEGAWA MASATAKA（2） HO K J（2） IIJIMA S（2）
IIJIMA SUMIO（2） ISHIHARA M（2） ISHIHARA MASATOU（2）
JAEHO K（2） KIM J（2） KIM JAEHO（2）
KOGA Y（2） KOGA YOSHINORI（2） MASATAKA H（2）
公开年 2021（3） 2014（2） 2015（2）
申请年 2014（3）  2020（3）  2013（2） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（11）

Electron-emitting element e.g. cold cathode-type electron source, has coating membrane that is film which transmits electron, and second electrode that is protective film of different material, and comprises electron emission surface.

MURAKAMI K, NAGAO M, KATSUHISA M, MASAYOSHI N

Gas sensor used in system for detecting alkene e.g. ethylene, comprises reaction section comprising hydroxylamine salts and reacts with aldehyde and/or ketone, and response section including electrode supporting semiconductor material.

ISHIHARA S, NAKANISHI T, HONG D

Connector e.g. male connector, comprises electrical contact material containing metal base material and conductive coating layer containing phase made of metal other than gold, and phase made of gold or non-metallic conductive material.

KUBO T, OKADA M, SHIMIZU T, KAWAI H, KAWAI Y

Electrical contact for forming e.g. connector, is produced using material including layer comprising carbon material which is single graphene layer or graphene laminate on base material comprising metal material having preset resistivity.

MORI K, SHIMIZU T

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Carbon-type solid acid used in solid acid catalyst, comprises carbonaceous material having sulfonic acid group, and has graphene structure in at least portion and contains boron.

SHIOYAMA H, SAKURAI H, XU Q, KIUCHI M, KIMURA Y, MU C

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J

Manufacture of graphene used as transparent electrode, involves coating organic substance on metal substrate and performing hydrogen plasma treatment using microwave plasma treatment device under reduced pressure.

YAMADA TAKATOSHI, KIM JAEHO, ISHIHARA MASATOU, KOGA YOSHINORI, HASEGAWA MASATAKA, IIJIMA SUMIO, YAMADA T, KIM J, ISHIHARA M, KOGA Y, HASEGAWA M, IIJIMA S, HO K J, YOSHINORI K, SUMIO I, TAKATOSHI Y, JAEHO K, MASATOU I, MASATAKA H