国家/地区 韩国（7） 美国（2）
IPC部 C（5） H（5）
IPC大类 C23（4） H01（4） C01（2）
IPC小类 C23C（4） H01L（4） C01B（2）
IPC C23C016/26（4） C01B032/186（2） C23C016/02（2）
H01L021/02（2） H01L029/16（2） H01L051/00（2）
发明人 CHO K W（7）
公开年 2020（3）
申请年 2019（4）  2018（2） 
专利权人 POSTECH ACADIND FOUND（7）

Attachable microphone for microphone array, has substrate having back chamber with first tubular hollow, and first frame member surrounding back chamber and containing first polymer or inorganic material; and back plate unit.

CHO K, MOON W, LEE S, KIM J, CHO K W, MOON W K, KIM J S

Optical sensor for light detection in wide spectral range, has source and drain electrodes formed on first graphene layer and semiconductor layer, without being electrically connected to barrier layer and first graphene layer, respectively.

CHO K W, LEE H C, YOO M S, CHUNG H J

Graphene laminate used for organic electronic device, comprises flexible substrate, metal oxide layer formed on flexible substrate, interfacial adhesion layer formed on metal oxide layer, and graphene formed on interfacial adhesive layer.

CHO K W, LEE E

Graphene used for organic electronic device, laminate comprises substrate, semiconductor layer comprising chalcogen compound, interfacial adhesion layer, and electrode formed on interfacial adhesive layer and comprising graphene.

CHO K W, LEE E

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Graphene laminate useful in organic electronic device e.g. organic thin film transistor, organic solar cell, varistor and organic memory device, comprises substrate, interfacial adhesion layer and graphene layer.

CHO K W, LEE E

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W