国家/地区 中国（14） 世界知识产权组织（4）
IPC部 C（8） H（5）
IPC大类 C01（6） H01（5） C23（4）
IPC小类 C01B（6） H01L（5） C23C（4）
IPC C01B031/04（6） C23C016/26（3） H01L021/28（2）
H01L021/336（2）
发明人 XIE X（10） DING G（7） JIANG M（5）
WANG H（4） ZHANG Y（3） CHEN Z（2）
DI Z（2） GONG Q（2） LI X（2）
LIU X（2） SUN L（2） WANG S（2）
WU T（2） XIE H（2） YU G（2）
公开年 2012（7） 2013（5） 2014（2）
申请年 2012（14）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（14）

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z

Method for growing noble metal nanocrystal on graphene oxide involves mixing graphene oxide and oil suspension of amine, preheating, adding noble metal precursor, increasing temperature, separating solid product, washing, and drying.

XU T, XU P, YU H, LI X

Preparation of graphene nanopore array involves coating carbon solution on surface of porous anodic aluminum oxide template, pressing porous anodic aluminum oxide template on substrate surface, peeling template, and annealing metal base.

DING G, JIANG M, XIE X

Graphene preparation involves adding halobenzene in organic solvent in presence of catalyst to form graphene suspension, filtering suspension to obtain graphene oxide and catalyst, adding graphene oxide with acid, and filtering.

DING G, JIANG M, LI X, SUN J, WU T, XIE X

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y

Method for preparing high-k gate medium on surface of multi-layer graphene, involves depositing metal oxide thin film on graphene surface by using atom layer depositing method and adopting metal oxide thin film as high-k gate medium layer.

WANG H, XIE X, YANG X, ZHANG Y

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X