国家/地区 中国（6）
IPC部 C（4） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3） H01L（2）
IPC C01B031/04（2） C01B032/186（2） C01B032/194（2）
发明人 JIA P（6）
公开年 2018（3）
申请年 2016（3） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Preparation of doped graphene involves providing substrate, forming protective layer on graphene layer, injecting doping element into graphene layer from upper surface of protective layer using ion implantation process and activating.

ZHANG M, GAO M, HAN X, JIA P, XUE Z, DI Z

Method for preparing graphene on insulator, involves providing supporting substrate and bonded structure obtained on upper surface of and removing sacrificial substrate by oxidation technology to obtain transferred graphene on insulator.

XUE Z, WANG T, JIA P, DI Z, ZHANG M

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J