国家/地区 中国（5） 日本（2）
IPC部 C（4） H（3）
IPC大类 C01（3） H01（3） C23（2）
C30（2）
IPC小类 C01B（3） H01L（3） C23C（2）
C30B（2）
IPC C01B032/186（2） C23C014/06（2） C23C016/26（2）
发明人 WANG H（6）
公开年 2015（4） 2016（2）
申请年 2015（6）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of magnetic field sensor used in semiconductor field, involves forming polypropylene carbonate-hexagonal boron nitride structure on substrate, placing polydimethylsiloxane film, adsorbing graphene film, and etching.

JIANG M, LI L, XIE X, XIE H, WANG H

Graphene device structure contact electrode preparation method, involves structure section arranged on linear graphene edge, depositing metal covered with section structure, and one-dimensional graphene connected with metal electrode.

DENG L, HE L, JIANG M, LI L, XIE X, ZHANG D, XIE H, WANG H, CHEN L

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L