国家/地区 世界知识产权组织（6） 日本（5） 韩国（2）
IPC部 C（6） H（5） B（2）
G（2）
IPC大类 C01（6） C23（5） H01（4）
H05（3） G01（2）
IPC小类 C01B（6） C23C（5） H01L（4）
H05H（3） G01N（2）
IPC C01B032/186（6） C23C016/26（4） H01L021/205（4）
H05H001/46（3） C23C016/44（2） C23C016/511（2）
发明人 TAKASHI M（6）
公开年 2020（3）
申请年 2019（3）  2020（2） 
专利权人 TOKYO ELECTRON LTD（6）

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Detecting abnormal growth of graphene by measuring reflection spectrum of measuring object having graphene film, creating film structure model to calculate polarization parameter, incorporating calculated value and detecting abnormal growth.

RYOTA I, TAKASHI M, AKIRA F, SHIN K

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T