国家/地区 世界知识产权组织（5） 日本（4） 韩国（4） 美国（4）
IPC部 C（5） H（5）
IPC大类 C23（5） H01（5） C01（3）
H05（2）
IPC小类 C23C（5） H01L（5） C01B（3）
H01J（3） H05H（2）
IPC C23C016/26（5） C23C016/511（3） H01J037/32（3）
H01L021/768（3） C01B032/186（2） C23C016/44（2）
C23C016/455（2） H01L021/02（2） H01L021/205（2）
H01L021/28（2） H01L021/285（2） H01L021/3205（2）
H01L023/532（2） H05H001/46（2）
发明人 IFUKU R（4） MATSUMOTO T（4） SUGIURA M（2）
UEDA H（2） WADA M（2）
公开年 2021（5）
申请年 2020（3）  2021（2） 
专利权人 TOKYO ELECTRON LTD（5）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L