国家/地区 中国（7）
IPC部 H（4） B（3） C（2）
IPC大类 H01（4） B01（3）
IPC小类 B01J（3） H01L（3）
IPC B01J027/22（2） H01L021/205（2）
发明人 FAN X（4） LIU Q（4） DONG J（3）
GUO X（3） LI C（3） LIU B（3）
DENG J（2） GUO W（2） XU C（2）
XU K（2）
公开年 2015（7）
申请年 2014（5）  2015（2） 
专利权人 UNIV BEIJING TECHNOLOGY（7）

Preparing solid phase micro extraction tube composite column used for detecting enrichment of trace amounts of phosphopeptide, involves preparing titanium dioxide-graphene oxide composite and injecting into capillary.

GUO G, WANG S, WANG X

Non-metallic substrate graphene growing method, involves cleaning non-metallic substrate surface and blown dry with nitrogen, and locating thin metal layer substrate on CVD reaction chamber.

DENG J, FAN X, GUO W, SUN J, XU C, XU K

Vertical graphene nanobelt used for super capacitor, comprises silicon chip, graphene nanobelt and single wall carbon nanotube.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Graphene nanoribbons-vertical-array molybdenum-carbide nanocrystalline composite material for e.g. catalytic hydrogen evolution application, has graphene nanoribbons vertical-array and hexagonal molybdenum carbide nanocrystals.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Field effect estimate CVD method for increasing graphene migration rate of copper foil, involves determining migration rate of graphene, and sending grid voltage to grid medium silicon dioxide to obtain unit area capacitance.

DENG J, GUO W, LIU Q, XU C, XU K, ZHU Y

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Graphene-based LED chip structure has substrate, nucleation layer, non-doped gallium nitride (GaN) layer and P-type electrode that are sequentially laminated in turn from bottom to top.

YANG C, YANG G, ZHANG Y, WANG Z