国家/地区 中国（19）
IPC部 H（11） G（6） C（3）
B（2）
IPC大类 H01（10） G01（4） B82（2）
C01（2） G02（2）
IPC小类 H01L（5） B82Y（2） C01B（2）
G01L（2） G02B（2） H01M（2）
IPC H01L029/08（2） H01L029/423（2） H01L029/739（2）
H01M004/88（2） H01M004/90（2）
发明人 WANG W（5） QU K（4） LIU L（3）
CHENG Q（2） HUANG W（2） JI N（2）
LIU S（2） MA Y（2） SUN L（2）
WANG D（2） WANG L（2） WEI W（2）
XU R（2） ZHAO J（2）
公开年 2019（15） 2020（4）
申请年 2019（19）
专利权人 UNIV NANJING POST TELECOM（19）

Graphene-based piezoresistive effect based pressure sensor, has high-resistance silicon substrate provided with silicon dioxide oxide layer that is formed with triangular cavity, and first metal electrode and second metal electrode fixed at two ends of graphene film.

LI F, WANG X, WANG D

Polymer-modified graphene film useful as transparent conductive electrode in organic light-emitting device comprises substrate, graphene film, and high-dielectric constant polymer modified layer modified on graphene film surface.

LIU L, YE D, DONG R, CHEN S, HUANG W

Fan blade type array graphene sounder, has transmission rod arranged between heat generating units, where ends of sounding unit are connected to handle rod and sounding unit is rotated along axis that is connected to handle rod.

WANG D, HE S, HE X

Preparation of bimetallic organic framework composite material used as e.g. cathode catalyst, annealing ZIF-8-doped ZIF-67 precursor powder, forming porous carbon, centrifuging, adding different amounts of graphene oxide, and freeze-drying.

ZHAO C, MA Y, QIN J, QIU Z

Graphite alkene double-curved ultra-material cylindrical waveguide structure for ultra-high density integrated light path, has innermost solid silicon dioxide column whose radius is determined, where thickness of graphene ring is in specific range.

HU S, XU J, ZHU W, ZHU Y, YUAN S, LU X, GAO B

Graphene modulation based THz transmission polarization converter, has bottom layer graphene patch placed along y-axis of top layer and bottom layer I-shaped metal patch that are arranged along diagonal line of resonant unit and overlapped with each other.

ZHANG H, ZENG L, LIU G, HUANG T

Vertical tunneling transistor based on graphene-molybdenum disulfide heterostructure, used in electronic equipment, has hexagonal boron nitride and substrate which are located below second graphene layer.

JI N, QU K, CHENG Q, WANG W

Flexible stress sensor, has strain induction layer formed with electrode, wire whose end is formed with outer side of flexible encapsulation layer, and strain-sensing layer formed as redox graphene rhombus net-shaped structure.

XU R, LIU L, ZHAO J, SUN L

Method for preparing flexible strain sensor, involves immersing pre-treated nylon spandex fabric in graphene oxide solution, taking out fabric and drying, followed by performing heat-reduction for utilizing water bath method, and washing.

SUN L, CHEN J, XU R, ZHAO J, LIU L

Tunnel Darner graphene nano-tube, has channel whose two sides are provided with silicon dioxide oxide layer cover channel, source region and drain region, and double gate provided with sub-grid electrode.

WANG Z, QU K, WANG W