国家/地区 中国（7）
IPC部 H（7） B（2）
IPC大类 H01（7） B82（2）
IPC小类 H01L（7） B82Y（2）
IPC H01L029/06（3） H01L029/49（3） H01L029/16（2）
H01L029/36（2） H01L029/423（2） H01L029/78（2）
发明人 WANG W（7）
公开年 2013（6）
申请年 2013（6） 
专利权人 UNIV NANJING POSTS TELECOM（7）

Graphene tunneling effect transistor has near-source gate, near-drain gate, and middle gate that are filled with three kinds of metal materials such that gate oxide layer is located between gate and intrinsic graphene nanoribbon.

WANG W, LI W, SHEN Z

FET integrated heterogeneous material graphite nano-gate structure, has FET provided with source region and drain region that are made of intrinsic semiconductor graphene nanometer belt.

YANG X, WANG W, XIA C, XIAO G

Double-material hetero-gate field effect transistor, has material heterogeneous grid provided with two conductive metal materials, intrinsic graphene material provided with conduction channel, and underlap region provided with drain region.

YAN S, WANG W, WANG Y

Halo-doped double-heterojunction material graphene strip has source electrode and drain electrode which are respectively provided with same length of source region and drain region.

WANG W, XIA C, XIAO G

Ladder-shaped nano graphene strip, has handrail whose left and right ends are fixed with graphene nanometer belt electrode, where electrode is provided with two rows of unlimited regular hexagon crystals.

LU F, WANG W, YAN S, YANG H, CHEN J, CAI Y

Non-symmetrical peak lightly doped drain structure for graphene nano-strip FET, has graphite strip arranged close to source region, doped part arranged close to channel, and device drain region arranged non-symmetrical to source region.

WANG W, YANG H, LU F, JIANG S

Parallel connection type graphene nanometer strip structure, has parallel nano graphene strip arranged at middle part of electrode, where two sides of strip form arm chair shape, and length and width of electrode and strip are changed.

YAN S, WANG W, CHEN J