国家/地区 中国（21）
IPC部 H（12） C（7） B（5）
G（3）
IPC大类 H01（12） C01（7） B82（3）
G01（2）
IPC小类 H01L（12） C01B（7） B82Y（3）
IPC C01B031/04（7） B82Y010/00（2） H01L021/02（2）
H01L021/04（2） H01L021/768（2） H01L029/78（2）
H01L043/06（2） H01L043/14（2） H01L051/56（2）
发明人 FU Y（8） HUANG R（8） WEI Z（8）
ZHANG X（8） YE T（4） ZHAO H（4）
PENG L（3） REN L（3） WANG S（3）
WEI Q（3） XU H（3） ZHANG Z（3）
GUO X（2） LI C（2） LIU Z（2）
公开年 2012（13） 2013（7） 2014（2）
申请年 2012（22）
专利权人 UNIV PEKING（22）

Graphene coating process of probe for atomic force microscope, involves dissolving first polymeric layer, second polymeric layer and polymeric substrate by solvent for attaching graphene layer to surface of probe.

DUAN H, PUJAL M P, MARTINEZ M L, BAYERL A, MAQUEDA M N

Preparation of phosphorus-doped graphene used for oxygen reduction reaction catalysis involves reacting graphite oxide and organic phosphorus compound.

HOU Y, ZHANG C

Graphene Allylprodine Hall element integrated circuit, has circuit chip whose core circuit region is provided with multiple metal interconnection electrodes, and metal pressure welding area electrode covered with passivation layer.

PENG L, WANG S, ZHANG Z, XU H

Graphene film preparation comprises providing graphene thin film grown on substrate, spin-coating polyvinyl alcohol acetal glue on film surface, and suspending whole thin film in etching solution.

ZHANG Y, GAN Z, FENG Q, WEI Y

Method for preparing molecular device, involves preparing graphene transistor device array, which comprises each graphene transistor device with gate electrode, source electrode, drain electrode and conductive channel.

GUO X, GAO L

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Integrated circuit graphite allylprodine Hall element packaging structure, has organic thin film layer formed on upper surface of graphene channel and provided with inorganic thin film layer.

PENG L, SHI R, XU H, WANG S, ZHANG Z

Semiconductor photoelectric device i.e. top emitting organic LED, has copper/graphene composite electrode utilized as anode, where electrode comprises copper foil on graphene film.

XU W, DAI L, MENG H, QIN G

Covalent modification of single-layer graphene comprises forming graphene on substrate, and adding polymethyl methacrylate solution to a surface of modified graphene and then heating and curing to form polymethyl methacrylate film.

LIU Z, YU J, PENG H, XIE Q, ZHANG L

Graphene growth quality detecting method, involves processing graphene with copper substrate by illuminating light from infrared lamp, and measuring growth quality of graphene in substrate by optical microscope or optical magnifier.

GUO X, JIA C, JIANG J