国家/地区 中国（7）
IPC部 H（4） B（2） C（2）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L027/15（2）
发明人 FU Y（3） WEI Q（3） WEI Z（3）
ZHAO H（3） DENG S（2） FU L（2）
HUANG R（2） LIU Z（2） WANG Z（2）
ZHANG X（2）
公开年 2011（7）
申请年 2011（4）  2010（2） 
专利权人 UNIV PEKING（7）

Method for processing nanometer scale figure at graphite or surface of graphene for processing food, involves etching graphite or graphene to form groove to obtain designed processing pattern.

FU Y, LI P, WEI Q, WEI Z, ZHANG C, ZHAO H

Graphene-cadmium selenide nanobelt heterojunction used for preparation of parallel component of solar battery, has graphene film and cadmium selenide nanobelt.

CAO A, FAN L, LI Z, WANG K, WU D, ZHANG L, ZHU H

Hall integrated circuit, has amplifier provided with hall element and FET, where hall element is provided with two exciting electrodes, two hall electrodes and graphene channel, and hall electrodes are connected with two sides of channel.

PENG L, WANG S, XU H, ZHANG Z

Preparation of single-layer graphene comprises catalyzing and growing graphene on surface of alloy substrate by using chemical vapor deposition method in hydrogen and inert atmosphere, and finishing preparing single-layer graphene.

FU L, LIU Z, DAI B

Nano-sized point light source for use in e.g. nanometer photoelectric integrated system, has bias voltage provided to graphene-metal node and single-point or multi-point light emitting light source in nanometer size formed at metal node.

WANG Z, ZHANG X, HUANG R, FU Y, DENG S, ZHAO H, WEI Q, WEI Z

Graphene, has point light source unit provided with electrodes of metal electrode array and grapheme film, where bias voltage is connected to metal electrode array and graphene film that is arranged in metal electrode array.

WANG Z, ZHANG X, HUANG R, FU Y, DENG S, ZHAO H, WEI Q, WEI Z

Preparation of graphene film involves plating carbon-containing metal, forming metal film, providing obtained silicon substrate, plating with metal film in vacuum annealing furnace and etching silicon substrate.

LIU N, FU L, LIU Z