国家/地区 中国（7）
IPC部 H（5） C（2） G（2）
IPC大类 H01（5） C01（2） G02（2）
IPC小类 H01L（4） C01B（2） G02F（2）
H01B（2）
IPC G02F001/1335（2） H01L021/28（2） H01L027/32（2）
H01L029/66（2） H01L029/786（2） H01L051/05（2）
发明人 WANG X（3） LIANG B（2） WANG W（2）
公开年 2017（4） 2016（3）
申请年 2016（4）  2017（3） 
专利权人 WUHAN CHINA STAR OPTOELECTRONICS TECHNO（7）

Manufacturing organic thin film transistor by forming graphene layer on surface of metal basal plate, covering organic solution, heating graphene layer, forming organic semiconductor nanowire, and transferring to target substrate.

LIANG B, WANG W

LED, has electronic transmission layer whose upper and lower sides are respectively contacted with light emitting layer and hole transport layer, and second electrode contacted with electronic transmission layer that is made of graphene.

CHENG Y

Method for manufacturing electrode layer in thin film transistor (TFT) substrate, involves dissolving metal nickel layer on silicon substrate, so as to make patterned graphene layer separated from silicon substrate.

WANG X

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

LCD, has LCD panel provided with thin film transistor array base plate and color film base plate, and quantum point color filter thin film provided with graphene quantum point and oxidation graphene quantum point.

LIANG B, WANG W

Preparation of flexible graphene conductive film involves forming a substrate on the surface of graphene layer, dissolving polyvinyl alcohol in water, heating, cooling, applying sol solution to the graphene layer and drying.

WANG X

Method for preparing graphene thin film transistor, involves defining source drain electrode graph on metal layer surface, and preparing grid electrode on one side far from graphene layer, to obtain graphene thin film transistor.

WANG X