国家/地区 中国（28） 美国（4） 韩国（3） 世界知识产权组织（3）
IPC部 C（19） B（15） H（10）
A（3） F（2） G（2）
IPC大类 B01（8） C01（7） H01（7）
C07（4） B82（3） C23（3）
C25（3） H05（3） A47（2）
B22（2） B32（2） C02（2）
C08（2） C09（2）
IPC小类 C01B（7） B01J（6） H01L（5）
C07D（4） B82Y（3） C23C（3）
H05B（3） A47K（2） B01D（2）
B22F（2） B32B（2） C02F（2）
C08K（2） C08L（2） C09K（2）
IPC B01J027/198（3） B82Y030/00（3） C01B032/186（3）
C01B032/194（3） C07D307/60（3） H01L021/02（3）
H05B003/14（3） A47K013/30（2） C01B032/184（2）
C08K003/04（2） C09K005/14（2） C23C016/26（2）
C25D015/00（2） H05B003/03（2）
发明人 AN X（31）
公开年 2022（14） 2023（6） 2021（5） 2018（2）
申请年 2022（11）  2021（9）  2019（5）  2020（2） 
专利权人 HANGZHOU JIA.（5） CHINA PETROL.（4） SAMSUNG ELEC.（3） SINOPEC BEIJ.（3）
UNIV CHANGZH.（2） YIMO GRAPHEN.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Catalyst for producing pyromellitic dianhydride from durene comprises carrier and active component loaded on carrier, where active component contains vanadium oxide, optionally phosphorus compounds, cesium compounds, auxiliary agent, heat conducting material and titanium dioxide.

ZHANG Z, ZHANG D, SHI H, YUAN B, LIU Y, AN X

Far-infrared heating film structure for drying tobacco leaf, has copper strip base layer whose bottom is paved with layer of graphene powder layer whose surface is coated with layer of polyethylene material layer one and non-woven fabric layer coated with layer of polyethylene material layer two.

AN X, AN C

Preparation of nitrogen-doped graphene-carbon nanotube composite film, involves mixing graphene oxide solution, acidified carbon nanotubes and water-soluble amine crosslinking agent to obtain slurry, coating slurry to form film, drying, subjecting to graphitization heat treatment, and calendering.

AN X

Preparing magnesium oxide/graphene quantum dots/chitosanoligosaccharide/polyvinyl alcohol complex absorption membrane used in wastewater treatment by dissolving and spinning lyophilized magnesium oxide/graphene quantum dots/chitosan oligosaccharide nanocomplex powder in water with polyvinyl alcohol.

YANG G, AN X, CHE C, LIU J, GONG Z

Preparing amorphous nickel-iron double metal hydroxide/reducing oxidation graphene composite material useful in catalytic electrolysis of water for oxygen evolution, comprises adding oxidized graphene powder into glycol solvent, stirring, centrifuging g and dispersing uniformly.

TANG C, GUO S, ZHU W, AN X

Preparing graphene/copper composite material useful in field of heat conduction, comprises e.g. preparing deposition solution, polishing anode and cathode plate, removing oil stain, carrying out alternate electrodeposition and performing asynchronous rolling and recrystallization annealing.

LIU X, WANG D, AN X, WEI K, XIA C, WEI W

Energy storage battery connecting cable sheath rubber material comprises e.g. polyurethane rubber, butadiene styrene rubber, ethylene propylene diene rubber-graphene mixture, nitrile rubber, sodium silicate adhesive, and hexamethyl cyclotrisilazane.

AN X, ZHONG J, ZHOU J, CHEN Q, YANG H, WANG Y, LI M

Device for continuously producing graphene, has lifting element connected with supporting frame for adjusting gap between roller wheel and conveyor belt assembly by driving supporting frame to move up and down.

NI D, CHENG J, LI Y, ZHANG P, AN X