国家/地区 美国（7） 中国（2）
IPC部 H（7） B（5）
IPC大类 H01（7） B82（5） H05（2）
IPC小类 B82Y（5） H01L（5） H01Q（2）
H05K（2）
IPC B82Y040/00（3） B82Y099/00（3） H01L021/336（3）
H01Q017/00（2） H05K009/00（2）
发明人 AVOURIS P（7）
公开年 2013（5） 2012（2）
申请年 2012（7）
专利权人 INT BUSINESS.（7）

Removable structure for absorbing broadband electromagnetic radiation in microwave and terahertz frequencies to cloak object, has graphene sheets provided on or about object, and dielectric layer placed intermediate graphene sheets.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Method for cloaking object by absorbing electromagnetic radiation at microwave and terahertz frequencies, involves placing layers of graphene sheet and transparent dielectric layer on or about object, and absorbing portion of frequencies.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Graphene transistor device for graphene transistor system has interface that maintains consistent degree of electrical conductivity between graphene layer and source and drain electrodes.

AFZALIARDAKANI A, AVOURIS P, FARMER D B, LIN Y, ZHU Y

Method for fabricating graphene transistor device, involves lifting-off resist and electrode and dielectric materials arranged above resist to form gate structure with gate electrode and gate dielectric space.

AFZALIARDAKANI A, AVOURIS P, FARMER D B, LIN Y, ZHU Y

Transistor structure, comprises graphene layer located on insulating layer, first metal portion overlying portion of graphene layer, second metal portion contacting and overhanging first metal portion, first electrode, and second electrode.

AVOURIS P, FARMER D B, LIN Y, ZHU Y

Formation of transistor structure involves forming graphene layer on insulating layer, forming stack of primary and secondary metal portions, and laterally offsetting sidewalls of primary metal portion relative to secondary portion.

AVOURIS P, FARMER D B, LIN Y, ZHU Y

Three-dimensional integrated circuit for three-dimensional hybrid integration of e.g. graphene field-effect transistors comprises semiconductor device, insulator formed on the semiconductor device, interconnect, and graphene device.

AVOURIS P, WU Y, ZHU W, CHANG J B, HAENSCH W E, LIU F, LIU Z