国家/地区 美国（8）
IPC部 H（7） C（4） B（3）
IPC大类 H01（7） C01（3） B05（2）
IPC小类 H01L（7） C01B（3） B05D（2）
H01M（2）
IPC H01L051/42（3） B05D003/06（2） H01L021/04（2）
H01L029/15（2） H01L029/16（2） H01L051/44（2）
H01M004/86（2）
发明人 CHEN A（8）
公开年 2010（3）
申请年 2008（3） 
专利权人 ADVANCED MIC.（4） UNIV NEW YOR.（3）

Synthesis of fluorinated graphene oxide used for detection of heavy metal ion, involves mixing graphite with acid solution, adding potassium permanganate to mixture, adding mixture to container containing ice, separating solid, and rinsing.

CHEN A

Polymer electrolyte membrane fuel cell comprises positive and negative electrodes, polyelectrolyte membrane having hydrophobic exterior surface subjected to UV/ozone exposure, and a solution of reduced graphene oxide and/or graphene oxide.

RAFAILOVICH M, ISSEROFF R, LI H, BLACKBURN L, CHEN A, CHITTABATHINI S, TSE A, PAN C, CHENG P

Polymer composition for forming active layer of e.g. solar cell comprises homogeneous dispersion containing graphene oxide or reduced graphene oxide and a polymer immiscible in poly(3-hexylthiophene-2,5-diyl).

RAFAILOVICH M, ISSEROFF R, HONGFEI L, CHEN A, HONFEI L, LI H

Attaching reduced graphene oxide or graphene oxide to polymer layer, comprises forming polymer layer having hydrophobic exterior surface, subjecting surface to UV or ozone exposure and applying reduced graphene oxide or graphene oxide.

RAFAILOVICH M, ISSEROFF R, CHEN A, CHITTABATHINI S, TSE A

Sidewall graphene device for three-dimensional electronics, has graphene layer that is provided on sidewall surface with varying width dimension and length dimension corresponding to height dimension and length dimension of surface.

CHEN A, KRIVOKAPIC Z

Method for fabricating graphene-based device e.g. FET for electronic application, involves forming graphene layer over FET and forming protective layer over graphene layer.

CHEN A, KRIVOKAPIC Z

Method for forming graphene-based FET device involves forming graphene layer within trench in substrate, to provide device structure such as FET.

CHEN A, KRIVOKAPIC Z

Sidewall graphene device fabricating process, involves forming protruding or mesa structure with sidewall surface, and forming device structure in contact with material layer in fin FET configuration.

CHEN A, KRIVOKAPIC Z