国家/地区 中国（18） 美国（4） 台湾（2）
IPC部 C（15） B（5） H（5）
D（2）
IPC大类 C01（7） H01（5） B01（3）
B82（2） C07（2） C23（2）
IPC小类 C01B（7） B01J（3） H01L（3）
B82Y（2） C07C（2） H01M（2）
IPC C01B031/04（7） B82Y030/00（2） H01L029/82（2）
发明人 CHEN C（22）
公开年 2014（22）
申请年 2014（12）  2013（9） 
专利权人 INST COAL CH.（6） UNIV NANJING.（3） INT BUSINESS.（2） UNIV CHANGSH.（2）
UNIV TAIWAN .（2）

Synthesizing polyoxymethylene dimethyl ether comprises reacting methanol and trioxymethylene using graphene oxide as a catalyst under normal atmospheric pressure.

CHEN C, CHEN G, FAN W, QIN Z, WAN G, WANG J, WU Z, WU J, ZHU H, WANG R

Forming reduced graphene oxide thin film, by ultrasonically dispersing graphene oxide solution, coating the solution on indium tin oxide glass substrate, drying and placing substrate with graphene oxide film in a plasma discharge chamber.

LI J, WANG X, WEI J, WANG Q, CHEN C

Graphene-supported nano-palladium-catalyzed carbonyl amination of halogenated aromatic hydrocarbon e.g. iodobenzene, involves extracting graphene-supported nano-palladium catalyst and halogenated aromatic hydrocarbon and amidating.

CHEN C, GAO P, GAO Z, SUN H, ZHANG W, ZHANG Y

Preparation of graphene composite film for non-linear optical device, involves preparing graphene-polyvinyl alcohol solution, preparing polyvinyl carbazole solution, and alternately suspending obtained solutions on slide glass.

WANG J, DONG N, ZHANG X, ZHANG S, CHEN C

Composite for use as lithium ion battery cathode material, comprises graphene and carbon nitride.

XU B, WANG X, ZHU J, WANG J, CHEN M, CHEN C, GAO S, FU Y, HU C, NIE F, CENG G, ZHANG J

Controlling carbon in graphene nanosized crystalline film electron cyclotron resonance involves silicon as substrate, mixing substrate in solvent and then ultrasonically cleaning in acetone and ethanol solutions.

CHEN C, DIAO D, FAN X, GUO M

Large-scale continuous production of high quality graphene by extruding graphene, heating in furnace, placing graphene powder in vacuum system, entering cyclone separator, separating graphene powder and gas, and collecting.

KONG Q, LI Y, WANG D, SU X, CHEN C, WANG W, ZHANG X, CAI R

Manufacturing graphene by combustible solvent reduction, comprises drying graphite oxide, then placing dried graphite oxide powder in a reaction container, impregnating with combustible solvent by combustion improver ignition and cooling.

KONG Q, LI Y, CHEN C, LIU Y

Transferring graphene layer, comprises executing electrostatic process to surface of substrate, electrostatically adsorbing graphene layer formed on metal carrier layer onto substrate, and immersing substrate into etching solution.

CHEN C, WANG D, HUANG I, CHEN C W, CHEN C C, WANG D Y, HUANG I S

Graphene transistor, useful as e.g. bottom-gate transistor, comprises two doping layers that is disposed on graphene layer or beneath graphene layer for providing dopants for graphene layer and comprises nonstoichiometric compounds.

CHEN C, HO P, CHEN C W, HO P H