国家/地区 台湾（6）
IPC部 H（6） B（4） C（2）
IPC大类 H01（4） B32（3） B82（2）
H05（2）
IPC小类 B32B（3） H01L（3） B82Y（2）
IPC
发明人 CHEN K（6）
公开年 2014（2）
申请年
专利权人 IND TECHNOLO.（2）

Circuit board structure, has dielectric layer provided on circuit layer, and build-up circuit layer exposing non-conductive seed layer region and electrically connected to pads through conductive via and conductive seed layer region.

CHEN K, KUO C, CHEN G, GUO J

Graphene thin film of thermoelectric device, has sheet layers and connecting portions that form continuous graphene thin film structure, and connecting portions that are provided with graphene of monolayer of carbon atoms.

CHEN K, LIN M, JU S, HSIEH Y, CHEN K Y, LIN M C, JU S P, HSIEH Y P

Modifying a surface of nano-particle powder e.g. silicon powder used in graphene-contained composite involves providing polar aprotic solvent; and mixing the solvent with powder so that the solvent adheres to the surface of powder.

HWANG B J, CHEN L, CHEN K, WONG D P, TSENG H, HWANG B, LIN L, CHEN L C, CHEN K H, TSENG H P

Substrate structure, has flexible substrate with release layer between carrier and flexible substrate, and release layer with graphene, reduced graphene oxide or combination.

CHEN K, LIU S, HUANG C, LI C, CHEN K T, LIU S H, HUANG C J, LI C H

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L